Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
نویسندگان
چکیده
In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T off) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T off. The hole concentration decreasing at the pore tips during the T off is the main reason for uniformity.
منابع مشابه
A Review of SiC Reactive Ion Etching in Fluorinated Plasmas
Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC device...
متن کاملControl of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC
An optimized deep reactive ion etching (DRIE) process for the fabrication of SiC microstructures has been developed. The optimized process enables the etching of 4H and 6H SiC to depths > 100 μm with the required characteristics of (1) high rate (>0.5 μm/min), (2) vertical sidewalls, (3) minimal microtrenching at the sidewall base, and (4) smooth etched surfaces. The optimized process was deter...
متن کاملOptimization of Electrochemical Etching Parameters in FIM/STM Tungsten Nanotip Fabrication
Field Ion Microscopy (FIM) and Scanning Tunneling Microscopy (STM) have found a wide application in nanotechnology. These microscopes use a metallic nanotip for image acquisition. Resolution of FIM and STM images depends largely on the radius of nanotip apex; the smaller the radius the higher the resolution. In this research, for tungsten nanotip fabrication, electrochemical etching of tungsten...
متن کاملFabrication of p-Type Nano-porous Silicon Prepared by Electrochemical Etching Technique in HF-Ethanol and HF-Ethanol-H2O Solutions
Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...
متن کاملThe Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1-4 cm² were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low da...
متن کامل